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System

Thermal CVD

Purpose

2D material synthesis

Specification

Furnace : SiC, 1400oC
RF-ICP
Metal-organic source
Auto pressure control
Dry scroll pump
PC control

Dimension [unit : mm]

3,000(W)x1,000(D)x1,800(H)
...

System

PECVD

Purpose

Surface modification

Specification

Plasma power : LF 10kW
Dual chamber
Metal-organic source
Auto pressure control
Oil rotary pump
PC control

Dimension [unit : mm]

1,300(W)x1,000(D)x1,500(H)
...

System

Sputter

Purpose

Metal deposition

Specification

Sputtering power : RF600W, DC 1kW
multi-function with ICP
Metal and insulator target
Auto pressure control
Oil rotary pump / TMP
PC control

Dimension [unit : mm]

2,700(W)x1,200(D)x2,000(H)
...

System

Arc Ion Plating

Purpose

TiN, CrN, TiAlN, mass production

Specification

Arc power : DC 10kW, 12set
1200mm OD chamber
Metal source, gas reaction
Auto pressure control
Diffusion pump, booster pump
oil rotary pump
PC control

Dimension [unit : mm]

1,300(W)x1,000(D)x1,500(H)
...

System

HDP etcher

Purpose

Surface cleaning and metal etching

Specification

Plasma power : RF 600W
Gas reaction
Auto pressure control
TMP and dry scroll pump
PC control

Dimension [unit : mm]

2,700(W)x1,500(D)x2,300(H)
...

System

Hybride System

Purpose

Surface cleaning and 2D deposition

Specification

Plasma power : RF 600W
Evaporator power : 50V, 300A
Metal source, gas reaction
Auto pressure control
Oil rotary pump
PC control

Dimension [unit : mm]

1,600(W)x1,000(D)x1,500(H)